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onsemi 90V 2A, Schottky Diode, 2-Pin DO-214AA MBRS190T3G / 8647806


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Product information
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Product Image
Item number:
     2794E-8647806
Manufacturer:
     onsemi
Manufacturer no.:
     MBRS190T3G
EAN/GTIN:
     5059042807202
Search terms:
Diodes
SMD diode
SMD diodes
Schottky diode
Products with NSV-, SBR- or S-prefixed Manufacturer Part Nos are AEC-Q101 automotive qualified. ON Semiconductor Schottky Barrier Diodes. This ON Semiconductor Schottky power rectifier employs the Schottky barrier principle using a barrier metal to create the best forward voltage drop−reverse current exchange. Suitable for low voltage, high-frequency rectification as well as a freewheeling and polarity protection diode in a range of surface mount applications wherever a more compact size and weight are key. Pb-Free Designed for Optimal Automated Board Assembly Stress protection guarding Epoxy Moulded Case Lightweight 11.7mg package
More information:
Mounting Type:
Surface Mount
Package Type:
DO-214AA (SMB)
Maximum Continuous Forward Current:
2A
Peak Reverse Repetitive Voltage:
90V
Diode Configuration:
Single
Rectifier Type:
Schottky Rectifier
Diode Type:
Schottky
Pin Count:
2
Maximum Forward Voltage Drop:
750mV
Number of Elements per Chip:
1
Diode Technology:
Schottky Barrier
Peak Non-Repetitive Forward Surge Current:
50A
Other search terms: Schottky diodes, smd diodes, 8647806, Semiconductors, Discrete Semiconductors, Schottky Diodes & Rectifiers, onsemi, MBRS190T3G
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2794 East Midlands NN17
50
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Prices: 2794 East Midlands NN17
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Minimum order quantity: 50 pieces ( £ 15.00* plus VAT )
Stock level: 2794 East Midlands NN17
Shipping: 2794 East Midlands NN17
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Rights to return this item: 2794 East Midlands NN17
Period of time:On the first day
Condition of packaging:Original packaging opened, but not damaged
Condition of goods:Unused
Return costs:Paid by supplier
Processing fee:Costs to be determined by the trading partner based on a case-by-case review.
The Terms and Conditions state that the warranty period continues regardless of the return rights stated.
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