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STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole / 8297136


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Product information
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Product Image
Item number:
     2794E-8297136
Manufacturer:
     ST Microelectronics
Manufacturer no.:
     STGWT80H65DFB
EAN/GTIN:
     5059042700848
Search terms:
IGBT
Power transistor
Transistor
Transistors
IGBT Discretes, STMicroelectronics
More information:
Maximum Continuous Collector Current:
120 A
Maximum Collector Emitter Voltage:
650 V
Maximum Gate Emitter Voltage:
±20V
Maximum Power Dissipation:
469 W
Package Type:
TO-3P
Mounting Type:
Through Hole
Channel Type:
N
Pin Count:
3
Switching Speed:
1MHz
Transistor Configuration:
Single
Dimensions:
15.8 x 5 x 20.1mm
Maximum Operating Temperature:
+175 °C
Minimum Operating Temperature:
-55 °C
Other search terms: power transistor, 8297136, Semiconductors, Discrete Semiconductors, IGBTs, STMicroelectronics, STGWT80H65DFB
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