STMicroelectronics STGWT60H65DFB IGBT, 80 A 650 V, 3-Pin TO-3P, Through Hole / 8294666

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piece

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Item number:
2794E-8294666

Manufacturer:
ST Microelectronics

Manufacturer no.:
STGWT60H65DFB

EAN/GTIN:
5059042012583

Search terms:

IGBT Discretes, STMicroelectronics

More information:


Maximum Continuous Collector Current:	80 A
Maximum Collector Emitter Voltage:	650 V
Maximum Gate Emitter Voltage:	±20V
Maximum Power Dissipation:	375 W
Package Type:	TO-3P
Mounting Type:	Through Hole
Channel Type:	N
Pin Count:	3
Transistor Configuration:	Single
Dimensions:	15.8 x 5 x 20.1mm
Maximum Operating Temperature:	+175 °C
Minimum Operating Temperature:	-55 °C

Other search terms: power transistor, 8294666, Semiconductors, Discrete Semiconductors, IGBTs, STMicroelectronics, STGWT60H65DFB

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