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Infineon IGB10N60TATMA1 IGBT, 10 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount / 8269055

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packet

Product information

Item number:
2794E-8269055

Manufacturer:
Infineon

Manufacturer no.:
IGB10N60TATMA1

EAN/GTIN:
5059043004273

Search terms:

Fast recovery diode
Fast recovery diodes
IGBT
Power transistor

Infineon TrenchStop IGBT Transistors, 600 and 650V. A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode. Collector-emitter voltage range 600 to 650V Very low VCEsat Low turn-off losses Short tail current Low EMI Maximum junction temperature 175°C

More information:


Maximum Continuous Collector Current:	10 A
Maximum Collector Emitter Voltage:	600 V
Maximum Gate Emitter Voltage:	±20V
Maximum Power Dissipation:	110 W
Package Type:	D2PAK (TO-263)
Mounting Type:	Surface Mount
Channel Type:	N
Pin Count:	3
Switching Speed:	1MHz
Transistor Configuration:	Single
Dimensions:	10.31 x 9.45 x 4.57mm
Maximum Operating Temperature:	+175 °C
Minimum Operating Temperature:	-40 °C

... > Semiconductors > Discrete Semiconductors > IGBTs

Other search terms: SMD transistor, SMD transistors, Transistor, Transistors, smd transistor, 8269055, Semiconductors, Discrete Semiconductors, IGBTs, Infineon, IGB10N60TATMA1

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