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| Item number:
2794E-8269002 Manufacturer no.:
IPB17N25S3100ATMA1 EAN/GTIN:
5059043072487 |
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| Infineon OptiMOS™T Power MOSFETs. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.. N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant) More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 17 A | Maximum Drain Source Voltage: | 250 V | Package Type: | D2PAK (TO-263) | Series: | OptiMOS T | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 100 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4V | Minimum Gate Threshold Voltage: | 2V | Maximum Power Dissipation: | 107 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -20 V, +20 V | Length: | 10mm |
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| Other search terms: power transistor, 8269002, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IPB17N25S3100ATMA1 |
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