Product range
United Kingdom
English
My Mercateo
Sign in / Register		Basket
 		 
 >  >  >  >  >  > Item

Infineon IGW25N120H3FKSA1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole / 8268232


Quantity:  piece  
Product information
Product Image
Product Image
Additonal Images
Item number:
     2794E-8268232
Manufacturer:
     Infineon
Manufacturer no.:
     IGW25N120H3FKSA1
EAN/GTIN:
     5059043149301
Search terms:
Fast recovery diode
Fast recovery diodes
IGBT
Power transistor
Infineon TrenchStop IGBT Transistors, 1100 to 1600V. A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode. Collector-emitter voltage range 1100 to 1600V Very low VCEsat Low turn-off losses Short tail current Low EMI Maximum junction temperature 175°C
More information:
Maximum Continuous Collector Current:
50 A
Maximum Collector Emitter Voltage:
1200 V
Maximum Gate Emitter Voltage:
±20V
Maximum Power Dissipation:
326 W
Package Type:
TO-247
Mounting Type:
Through Hole
Channel Type:
N
Pin Count:
3
Switching Speed:
1MHz
Transistor Configuration:
Single
Dimensions:
16.13 x 5.21 x 21.1mm
Maximum Operating Temperature:
+175 °C
Minimum Operating Temperature:
-40 °C
Other search terms: Transistor, Transistors, power transistor, 8268232, Semiconductors, Discrete Semiconductors, IGBTs, Infineon, IGW25N120H3FKSA1
An overview of the conditions1
Delivery period
Stock level
Price
from £ 2.921*
  
Price is valid from 100 pieces
Select conditions yourself
Share itemAdd item to shopping list
Staggered prices
Order quantity
Net
Gross
Unit
1 piece
£ 4.238*
£ 5.086
per piece
from 10 pieces
£ 3.604*
£ 4.325
per piece
from 25 pieces
£ 3.386*
£ 4.063
per piece
from 50 pieces
£ 3.139*
£ 3.767
per piece
from 100 pieces
£ 2.921*
£ 3.505
per piece
* Prices with asterisk are net prices excl. statutory VAT.
Our offer is only aimed at companies, public institutions and freelancers.