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Infineon IKW15N120H3FKSA1 IGBT, 30 A 1200 V, 3-Pin TO-247, Through Hole / 8268223

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packet

Product information

Item number:
2794E-8268223

Manufacturer:
Infineon

Manufacturer no.:
IKW15N120H3

EAN/GTIN:
5059043159829

Search terms:

Fast recovery diode
Fast recovery diodes
IGBT
Power transistor

Infineon TrenchStop IGBT Transistors, 1100 to 1600V. A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode. Collector-emitter voltage range 1100 to 1600V Very low VCEsat Low turn-off losses Short tail current Low EMI Maximum junction temperature 175°C

More information:


Maximum Continuous Collector Current:	30 A
Maximum Collector Emitter Voltage:	1200 V
Maximum Gate Emitter Voltage:	±20V
Maximum Power Dissipation:	217 W
Package Type:	TO-247
Mounting Type:	Through Hole
Channel Type:	N
Pin Count:	3
Transistor Configuration:	Single
Dimensions:	16.03 x 5.16 x 21.1mm
Maximum Operating Temperature:	+175 °C
Minimum Operating Temperature:	-40 °C

... > Semiconductors > Discrete Semiconductors > IGBTs

Other search terms: Transistor, Transistors, power transistor, 8268223, Semiconductors, Discrete Semiconductors, IGBTs, Infineon, IKW15N120H3

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