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| Item number:
2794E-8259051 Manufacturer no.:
IPD042P03L3GATMA1 EAN/GTIN:
5059043606101 |
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| Infineon OptiMOS™P P-Channel Power MOSFETs. The Infineon OptiMOS ™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.. Enhancement mode Avalanche rated Low switching and conduction power losses Pb-free lead plating; RoHS compliant Standard packages OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C More information: | | Channel Type: | P | Maximum Continuous Drain Current: | 70 A | Maximum Drain Source Voltage: | 30 V | Package Type: | DPAK (TO-252) | Series: | OptiMOS P | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 6.8 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 1V | Minimum Gate Threshold Voltage: | 2V | Maximum Power Dissipation: | 150 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -20 V, +20 V | Length: | 6.73mm |
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| Other search terms: 8259051, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IPD042P03L3GATMA1 |
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