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P-Channel MOSFET, 27 A, 20 V, 8-Pin PowerPAK 1212-8 Vishay SISS23DN-T1-GE3 / 8141314


Quantity:  packet  
Product information
Product Image
Product Image
Item number:
     2794E-8141314
Manufacturer:
     Vishay
Manufacturer no.:
     SISS23DN-T1-GE3
EAN/GTIN:
     5059040742383
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor
More information:
Channel Type:
P
Maximum Continuous Drain Current:
27 A
Maximum Drain Source Voltage:
20 V
Package Type:
PowerPAK 1212-8
Series:
TrenchFET
Mounting Type:
Surface Mount
Pin Count:
8
Maximum Drain Source Resistance:
11.5 mΩ
Channel Mode:
Enhancement
Minimum Gate Threshold Voltage:
0.4V
Maximum Power Dissipation:
57 W
Transistor Configuration:
Single
Maximum Gate Source Voltage:
-8 V, +8 V
Length:
3.3mm
Maximum Operating Temperature:
+150 °C
Other search terms: 8141314, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SISS23DNT1GE3
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1 packet contains 20 pieces (from £ 0.455* per piece)
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