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| Item number:
2794E-8123139 Manufacturer no.:
SI2365EDS-T1-GE3 EAN/GTIN:
5059040791077 |
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| P-Channel MOSFET, 8V to 20V, Vishay Semiconductor More information: | | Channel Type: | P | Maximum Continuous Drain Current: | 4.7 A | Maximum Drain Source Voltage: | 20 V | Package Type: | SOT-23 | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 67.5 mΩ | Channel Mode: | Enhancement | Minimum Gate Threshold Voltage: | 0.4V | Maximum Power Dissipation: | 1.7 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -8 V, +8 V | Length: | 3.04mm | Maximum Operating Temperature: | +150 °C | Number of Elements per Chip: | 1 |
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| Other search terms: 8123139, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SI2365EDST1GE3 |
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