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N-Channel MOSFET, 5.8 A, 30 V, 3-Pin SOT-23 Vishay SI2366DS-T1-GE3 / 8123132


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Product information
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Product Image
Item number:
     2794E-8123132
Manufacturer:
     Vishay
Manufacturer no.:
     SI2366DS-T1-GE3
EAN/GTIN:
     5059040793583
Search terms:
Diodes
Power transistor
MOSFET
MOSFET transistor
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
More information:
Channel Type:
N
Maximum Continuous Drain Current:
5.8 A
Maximum Drain Source Voltage:
30 V
Package Type:
SOT-23
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
42 mΩ
Channel Mode:
Enhancement
Minimum Gate Threshold Voltage:
1.2V
Maximum Power Dissipation:
2.1 W
Transistor Configuration:
Single
Maximum Gate Source Voltage:
-20 V, +20 V
Length:
3.04mm
Maximum Operating Temperature:
+150 °C
Number of Elements per Chip:
1
Other search terms: SMD transistor, SMD transistors, Transistor, Transistors, smd transistor, 8123132, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SI2366DST1GE3
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2794 East Midlands NN17
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Prices: 2794 East Midlands NN17
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Rights to return this item: 2794 East Midlands NN17
Period of time:On the first day
Condition of packaging:Original packaging opened, but not damaged
Condition of goods:Unused
Return costs:Paid by supplier
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The Terms and Conditions state that the warranty period continues regardless of the return rights stated.
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