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IXYS IXYP20N120C3 IGBT, 40 A 1200 V, 3-Pin TO-220, Through Hole / 8080243


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Item number:
     2794E-8080243
Manufacturer:
     IXYS
Manufacturer no.:
     IXYP20N120C3
EAN/GTIN:
     5059041716802
Search terms:
IGBT
Power transistor
Transistor
Transistors
IGBT Discretes, IXYS XPT series. The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages. High power density and low VCE(sat) Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage Short circuit capability for 10usec Positive on-state voltage temperature coefficient Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes International standard and proprietary high voltage packages
More information:
Maximum Continuous Collector Current:
40 A
Maximum Collector Emitter Voltage:
1200 V
Maximum Gate Emitter Voltage:
±20V
Maximum Power Dissipation:
278 W
Package Type:
TO-220
Mounting Type:
Through Hole
Channel Type:
N
Pin Count:
3
Switching Speed:
50kHz
Transistor Configuration:
Single
Dimensions:
10.66 x 4.82 x 16mm
Maximum Operating Temperature:
+175 °C
Minimum Operating Temperature:
-55 °C
Other search terms: power transistor, 8080243, Semiconductors, Discrete Semiconductors, IGBTs, IXYS, IXYP20N120C3
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Condition of packaging:Original packaging opened, but not damaged
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