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IXYS IXA37IF1200HJ IGBT, 58 A 1200 V, 3-Pin ISOPLUS247, Through Hole / 8080215


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Product information
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Item number:
     2794E-8080215
Manufacturer:
     IXYS
Manufacturer no.:
     IXA37IF1200HJ
EAN/GTIN:
     5059041716482
Search terms:
IGBT
Power transistor
Transistor
Transistors
IGBT Discretes, IXYS XPT series. The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages. High power density and low VCE(sat) Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage Short circuit capability for 10usec Positive on-state voltage temperature coefficient Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes International standard and proprietary high voltage packages
More information:
Maximum Continuous Collector Current:
58 A
Maximum Collector Emitter Voltage:
1200 V
Maximum Gate Emitter Voltage:
±20V
Maximum Power Dissipation:
195 W
Package Type:
ISOPLUS247
Mounting Type:
Through Hole
Channel Type:
N
Pin Count:
3
Transistor Configuration:
Single
Dimensions:
16.13 x 5.21 x 21.34mm
Maximum Operating Temperature:
+125 °C
Minimum Operating Temperature:
-40 °C
Other search terms: power transistor, 8080215, Semiconductors, Discrete Semiconductors, IGBTs, IXYS, IXA37IF1200HJ
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Stock level: 2794 East Midlands NN17
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Rights to return this item: 2794 East Midlands NN17
Period of time:On the first day
Condition of packaging:Original packaging opened, but not damaged
Condition of goods:Unused
Return costs:Paid by supplier
Processing fee:Costs to be determined by the trading partner based on a case-by-case review.
The Terms and Conditions state that the warranty period continues regardless of the return rights stated.
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