onsemi HGT1S10N120BNST IGBT, 80 A 1200 V, 3-Pin D2PAK (TO-263), Surface Mount / 8076660

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packet

Product information

Item number:
2794E-8076660

Manufacturer:
onsemi

Manufacturer no.:
HGT1S10N120BNST

EAN/GTIN:
5059042499100

Search terms:

Discrete IGBTs, 1000V and over, Fairchild Semiconductor

More information:


Maximum Continuous Collector Current:	80 A
Maximum Collector Emitter Voltage:	1200 V
Maximum Gate Emitter Voltage:	±20V
Maximum Power Dissipation:	298 W
Package Type:	D2PAK (TO-263)
Mounting Type:	Surface Mount
Channel Type:	N
Pin Count:	3
Switching Speed:	1MHz
Transistor Configuration:	Single
Dimensions:	10.67 x 11.33 x 4.83mm
Maximum Operating Temperature:	+150 °C
Minimum Operating Temperature:	-55 °C

Other search terms: Transistor, Transistors, smd transistor, 8076660, Semiconductors, Discrete Semiconductors, IGBTs, onsemi, HGT1S10N120BNST

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from £ 3.912*

Price is valid from 200 packets

1 packet contains 2 pieces (from £ 1.956* per piece)

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