|  |
| |
| Item number:
2794E-8015643 Manufacturer no.:
PBSS8110X,135 EAN/GTIN:
5059043721316 |
| |
|
| | |
| Low Saturation Voltage NPN Transistors. A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications. More information: | | Transistor Type: | NPN | Maximum DC Collector Current: | 1 A | Maximum Collector Emitter Voltage: | 100 V | Package Type: | SOT-89 | Mounting Type: | Surface Mount | Maximum Power Dissipation: | 2 W | Minimum DC Current Gain: | 150 | Transistor Configuration: | Single | Maximum Collector Base Voltage: | 120 V | Maximum Emitter Base Voltage: | 5 V | Maximum Operating Frequency: | 100 MHz | Pin Count: | 3 | Number of Elements per Chip: | 1 | Dimensions: | 4.6 x 2.6 x 1.6mm | Maximum Operating Temperature: | +150 °C |
|
| | |
| | | |
| | | |
| |