N-channel Power MOSFET, IXYS HiperFET™ Q3 Series. The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control. Fast intrinsic rectifier diode Low RDS(on) and QG (gate charge) Low intrinsic gate resistance Industry standard packages Low package inductance High power density More information:  | | Channel Type: | N | Maximum Continuous Drain Current: | 32 A | Maximum Drain Source Voltage: | 800 V | Package Type: | PLUS247 | Series: | HiperFET, Q3-Class | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 270 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 6V | Maximum Power Dissipation: | 1 kW | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -30 V, +30 V | Length: | 16.13mm | Maximum Operating Temperature: | +150 °C |
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