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STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247, Through Hole / 7925814


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Item number:
     2794E-7925814
Manufacturer:
     ST Microelectronics
Manufacturer no.:
     STGW80H65DFB
EAN/GTIN:
     5059042066180
Search terms:
IGBT
Power transistor
Transistor
Transistors
IGBT Discretes, STMicroelectronics
More information:
Maximum Continuous Collector Current:
120 A
Maximum Collector Emitter Voltage:
650 V
Maximum Gate Emitter Voltage:
±20V
Maximum Power Dissipation:
469 W
Package Type:
TO-247
Mounting Type:
Through Hole
Channel Type:
N
Pin Count:
3
Transistor Configuration:
Single
Dimensions:
15.75 x 5.15 x 20.15mm
Maximum Operating Temperature:
+175 °C
Minimum Operating Temperature:
-55 °C
Other search terms: power transistor, 7925814, Semiconductors, Discrete Semiconductors, IGBTs, STMicroelectronics, STGW80H65DFB
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