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| Item number:
2794E-7689310 Manufacturer no.:
SIHB30N60E-GE3 EAN/GTIN:
5059040901599 |
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| N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor. The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS). Features. Low figure-of-merit (FOM) RDS(on) x Qg Low input capacitance (Ciss) Low on-resistance (RDS(on)) Ultra-low gate charge (Qg) Fast switching Reduced switching and conduction losses More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 29 A | Maximum Drain Source Voltage: | 600 V | Package Type: | D2PAK (TO-263) | Series: | E Series | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 125 mΩ | Channel Mode: | Enhancement | Minimum Gate Threshold Voltage: | 2V | Maximum Power Dissipation: | 250 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -20 V, +20 V | Length: | 10.67mm | Maximum Operating Temperature: | +150 °C |
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| Other search terms: power transistor, 7689310, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SIHB30N60EGE3 |
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