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N-Channel MOSFET, 12 A, 600 V, 3-Pin TO-220 ON Semiconductor FDP12N60NZ


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Product information
Product Image
Product Image
Item number:
     2794E-759-9175
Manufacturer:
     ON Semiconductor
Manufacturer no.:
     FDP12N60NZ
EAN/GTIN:
     5059042483802
Search terms:
Power factor correction
Power transistor
MOSFET
MOSFET transistor
Channel Type = N
Maximum Continuous Drain Current = 12 A
Maximum Drain Source Voltage = 600 V
Package Type = TO-220
Mounting Type = Through Hole
Pin Count = 3
Maximum Drain Source Resistance = 650 mΩ
Channel Mode = Enhancement
Minimum Gate Threshold Voltage = 3V
Maximum Power Dissipation = 240 W
Transistor Configuration = Single
Maximum Gate Source Voltage = -30 V, +30 V
Number of Elements per Chip = 1
Typical Gate Charge @ Vgs = 26 nC @ 10 V

UniFET™ N-Channel MOSFET, Fairchild Semiconductor. UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress. UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.
Other search terms: power transistor, 7599175, Semiconductors, Discrete Semiconductors, MOSFETs, ON Semiconductor, FDP12N60NZ
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