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Infineon IKW40N120H3FKSA1 IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole / 7528347

Quantity:

piece

Product information

Item number:
2794E-7528347

Manufacturer:
Infineon

Manufacturer no.:
IKW40N120H3FKSA1

EAN/GTIN:
5059043209739

Search terms:

Fast recovery diode
Fast recovery diodes
IGBT
Power transistor

Infineon TrenchStop IGBT Transistors, 1100 to 1600V. A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode. Collector-emitter voltage range 1100 to 1600V Very low VCEsat Low turn-off losses Short tail current Low EMI Maximum junction temperature 175°C

More information:


Maximum Continuous Collector Current:	80 A
Maximum Collector Emitter Voltage:	1200 V
Maximum Gate Emitter Voltage:	±20V
Maximum Power Dissipation:	483 W
Package Type:	TO-247
Mounting Type:	Through Hole
Channel Type:	N
Pin Count:	3
Transistor Configuration:	Single
Dimensions:	16.03 x 5.16 x 21.1mm
Maximum Operating Temperature:	+175 °C
Minimum Operating Temperature:	-40 °C