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| Item number:
2794E-6012116 Manufacturer no.:
2SK3669(Q) EAN/GTIN:
5059041950152 |
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| MOSFET N-Channel, 2SK Series, Toshiba More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 10 A | Maximum Drain Source Voltage: | 100 V | Package Type: | PW Mold | Series: | 2SK | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 125 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 5V | Maximum Power Dissipation: | 20 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -20 V, +20 V | Length: | 6.5mm | Maximum Operating Temperature: | +150 °C |
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| Other search terms: 6012116, Semiconductors, Discrete Semiconductors, MOSFETs, Toshiba, 2SK3669(Q) |
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