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| Item number:
2794E-5411124 Manufacturer no.:
IRFBE30PBF EAN/GTIN:
5059040738256 |
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| N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 4.1 A | Maximum Drain Source Voltage: | 800 V | Package Type: | TO-220AB | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 3 Ω | Channel Mode: | Enhancement | Minimum Gate Threshold Voltage: | 2V | Maximum Power Dissipation: | 125 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -20 V, +20 V | Length: | 10.41mm | Maximum Operating Temperature: | +150 °C | Number of Elements per Chip: | 1 |
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| Other search terms: 5411124, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, IRFBE30PBF |
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