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N-Channel MOSFET, 120 mA, 600 V Depletion, 3-Pin SOT-223 Infineon BSP135H6327XTSA1 / 3545708


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Product information
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Product Image
Item number:
     2794E-3545708
Manufacturer:
     Infineon
Manufacturer no.:
     BSP135
EAN/GTIN:
     5059043706979
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Infineon SIPMOS® N-Channel MOSFETs
More information:
Channel Type:
N
Maximum Continuous Drain Current:
120 mA
Maximum Drain Source Voltage:
600 V
Package Type:
SOT-223
Series:
SIPMOS®
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
60 Ω
Channel Mode:
Depletion
Maximum Gate Threshold Voltage:
1V
Minimum Gate Threshold Voltage:
2.1V
Maximum Power Dissipation:
1.8 W
Transistor Configuration:
Single
Maximum Gate Source Voltage:
-20 V, +20 V
Length:
6.5mm
Other search terms: 3545708, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, BSP135
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