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onsemi NXH350N100H4Q2F2S1G IGBT Module, 303 A 1000 V Q2PACK (Pb-Free/Halide-Free) / 2456975


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Product information
Product Image
Product Image
Item number:
     2794E-2456975
Manufacturer:
     onsemi
Manufacturer no.:
     NXH350N100H4Q2F2S1G
EAN/GTIN:
     n/a
Search terms:
IGBT modules
Power transistor
Transistor
Transistors
Maximum Continuous Collector Current = 303 A
Maximum Collector Emitter Voltage = 1000 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 592 W
Package Type = Q2PACK (Pb-Free/Halide-Free)
More information:
Maximum Continuous Collector Current:
303 A
Maximum Collector Emitter Voltage:
1000 V
Maximum Gate Emitter Voltage:
±20V
Maximum Power Dissipation:
592 W
Number of Transistors:
4
Package Type:
Q2PACK (Pb-Free/Halide-Free)
Other search terms: power transistor, 2456975, Semiconductors, Discrete Semiconductors, IGBTs, onsemi, NXH350N100H4Q2F2S1G
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2794 East Midlands NN17
36
Carriage paid
from £ 205.178*
£ 205.178*
2 days
36
1
Carriage paid
from £ 207.84*
£ 237.53*
Prices: 2794 East Midlands NN17
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from 36 pieces
£ 205.178*
£ 246.214
per piece
Orders only in multiples of 36 pieces
Minimum order quantity: 36 pieces ( £ 7,386.408* plus VAT )
Stock level: 2794 East Midlands NN17
Shipping: 2794 East Midlands NN17
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Rights to return this item: 2794 East Midlands NN17
Period of time:On the first day
Condition of packaging:Original packaging opened, but not damaged
Condition of goods:Unused
Return costs:Paid by supplier
Processing fee:Costs to be determined by the trading partner based on a case-by-case review.
The Terms and Conditions state that the warranty period continues regardless of the return rights stated.
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