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Infineon FD150R12RT4HOSA1 IGBT Module, 150 A 1200 V / 2445819


Quantity:  piece  
Product information
Product Image
Product Image
Item number:
     2794E-2445819
Manufacturer:
     Infineon
Manufacturer no.:
     FD150R12RT4HOSA1
EAN/GTIN:
     n/a
Search terms:
Transistor
Transistors
Maximum Continuous Collector Current = 150 A
Maximum Collector Emitter Voltage = 1200 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 790 W
More information:
Maximum Continuous Collector Current:
150 A
Maximum Collector Emitter Voltage:
1200 V
Maximum Gate Emitter Voltage:
±20V
Maximum Power Dissipation:
790 W
Number of Transistors:
1
Other search terms: 2445819, Semiconductors, Discrete Semiconductors, IGBTs, Infineon, FD150R12RT4HOSA1
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from £ 94.664*
  
Price is valid from 5 pieces
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1 piece
£ 107.336*
£ 128.803
per piece
from 2 pieces
£ 105.188*
£ 126.226
per piece
from 5 pieces
£ 94.664*
£ 113.597
per piece
* Prices with asterisk are net prices excl. statutory VAT.
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