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| Item number:
2794E-2445817 Manufacturer no.:
FD150R12RT4HOSA1 EAN/GTIN:
n/a |
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| Maximum Continuous Collector Current = 150 A
Maximum Collector Emitter Voltage = 1200 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 790 W More information: | | Maximum Continuous Collector Current: | 150 A | Maximum Collector Emitter Voltage: | 1200 V | Maximum Gate Emitter Voltage: | ±20V | Maximum Power Dissipation: | 790 W | Number of Transistors: | 1 |
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| Other search terms: power transistor, 2445817, Semiconductors, Discrete Semiconductors, IGBTs, Infineon, FD150R12RT4HOSA1 |
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