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Infineon FP25R12W2T4B11BOMA1 IGBT Module, 39 A 1200 V / 2445389


Quantity:  piece  
Product information
Product Image
Product Image
Item number:
     2794E-2445389
Manufacturer:
     Infineon
Manufacturer no.:
     FP25R12W2T4B11BOMA1
EAN/GTIN:
     n/a
Search terms:
IGBT modules
Power transistor
Transistor
Transistors
Maximum Continuous Collector Current = 39 A
Maximum Collector Emitter Voltage = 1200 V
Maximum Gate Emitter Voltage = +/-20V
Maximum Power Dissipation = 175 W
More information:
Maximum Continuous Collector Current:
39 A
Maximum Collector Emitter Voltage:
1200 V
Maximum Gate Emitter Voltage:
+/-20V
Maximum Power Dissipation:
175 W
Number of Transistors:
7
Other search terms: power transistor, 2445389, Semiconductors, Discrete Semiconductors, IGBTs, Infineon, FP25R12W2T4B11BOMA1
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Stock level: 2794 East Midlands NN17
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Rights to return this item: 2794 East Midlands NN17
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Condition of goods:Unused
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