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| Item number:
2794E-2326709 Manufacturer no.:
FP35R12N2T7BPSA1 EAN/GTIN:
n/a |
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| Maximum Continuous Collector Current = 35 A
Maximum Collector Emitter Voltage = 1200 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 20 mW
Package Type = Module
Mounting Type = Chassis Mount
Channel Type = N
Pin Count = 23
Transistor Configuration = 3 Phase More information: | | Maximum Continuous Collector Current: | 35 A | Maximum Collector Emitter Voltage: | 1200 V | Maximum Gate Emitter Voltage: | ±20V | Maximum Power Dissipation: | 20 mW | Number of Transistors: | 7 | Configuration: | 3 Phase | Package Type: | Module | Mounting Type: | Chassis Mount | Channel Type: | N | Pin Count: | 23 | Transistor Configuration: | 3 Phase |
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| Other search terms: power transistor, 2326709, Semiconductors, Discrete Semiconductors, IGBTs, Infineon, FP35R12N2T7BPSA1 |
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