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Infineon FP100R12N2T7BPSA1 3 Phase IGBT, 100 A 1200 V, 31-Pin Module, Chassis Mount / 2326701


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Product information
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Product Image
Item number:
     2794E-2326701
Manufacturer:
     Infineon
Manufacturer no.:
     FP100R12N2T7BPSA1
EAN/GTIN:
     n/a
Search terms:
Power transistor
Transistor
Transistors
power transistor
Maximum Continuous Collector Current = 100 A
Maximum Collector Emitter Voltage = 1200 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 20 mW
Package Type = Module
Mounting Type = Chassis Mount
Channel Type = N
Pin Count = 31
Transistor Configuration = 3 Phase
More information:
Maximum Continuous Collector Current:
100 A
Maximum Collector Emitter Voltage:
1200 V
Maximum Gate Emitter Voltage:
±20V
Maximum Power Dissipation:
20 mW
Number of Transistors:
7
Configuration:
3 Phase
Package Type:
Module
Mounting Type:
Chassis Mount
Channel Type:
N
Pin Count:
31
Transistor Configuration:
3 Phase
Other search terms: 2326701, Semiconductors, Discrete Semiconductors, IGBTs, Infineon, FP100R12N2T7BPSA1
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from £ 109.316*
  
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£ 144.152
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£ 131.179
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