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Silicon N-Channel MOSFET, 39 A, 650 V, 3-Pin TO-247 Infineon IMW65R048M1HXKSA1 / 2320389


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Product information
Product Image
Product Image
Item number:
     2794E-2320389
Manufacturer:
     Infineon
Manufacturer no.:
     IMW65R048M1HXKSA1
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Transistor
Channel Type = N
Maximum Continuous Drain Current = 39 A
Maximum Drain Source Voltage = 650 V
Series = CoolSiC
Mounting Type = Through Hole
Pin Count = 3
Maximum Drain Source Resistance = 0.064 Ω
Channel Mode = Enhancement
Maximum Gate Threshold Voltage = 5.7V
Number of Elements per Chip = 1
More information:
Channel Type:
N
Maximum Continuous Drain Current:
39 A
Maximum Drain Source Voltage:
650 V
Package Type:
TO-247
Series:
CoolSiC
Mounting Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance:
0.064 Ω
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
5.7V
Number of Elements per Chip:
1
Transistor Material:
Silicon
Other search terms: Transistors, power transistor, 2320389, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IMW65R048M1HXKSA1
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Rights to return this item: 2794 East Midlands NN17
Period of time:On the first day
Condition of packaging:Original packaging opened, but not damaged
Condition of goods:Unused
Return costs:Paid by supplier
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The Terms and Conditions state that the warranty period continues regardless of the return rights stated.
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