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N-Channel MOSFET, 8 A, 850 V, 3-Pin DPAK Vishay SIHD11N80AE-T1-GE3 / 2282849


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Product information
Product Image
Product Image
Item number:
     2794E-2282849
Manufacturer:
     Vishay
Manufacturer no.:
     SIHD11N80AE-T1-GE3
EAN/GTIN:
     n/a
Search terms:
2282849
Semiconductors
Discrete Semiconductors
MOSFETs
Channel Type = N
Maximum Continuous Drain Current = 8 A
Maximum Drain Source Voltage = 850 V
Package Type = DPAK (TO-252)
Mounting Type = Surface Mount
Pin Count = 3
Maximum Drain Source Resistance = 0.45 Ω
Channel Mode = Enhancement
Maximum Gate Threshold Voltage = 4V
Transistor Material = Si
More information:
Channel Type:
N
Maximum Continuous Drain Current:
8 A
Maximum Drain Source Voltage:
850 V
Package Type:
DPAK (TO-252)
Series:
E Series
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
0.45 Ω
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4V
Number of Elements per Chip:
1
Transistor Material:
Si
Other search terms: Vishay, SIHD11N80AET1GE3
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from £ 1.092*
  
Price is valid from 500 pieces
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£ 1.483
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£ 1.396
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from 500 pieces
£ 1.092*
£ 1.31
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