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Dual N-Channel MOSFET, 25 A, 650 V, 3-Pin D2PAK Vishay SIHB120N60E-T5-GE3 / 2282845


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Product information
Product Image
Product Image
Item number:
     2794E-2282845
Manufacturer:
     Vishay
Manufacturer no.:
     SIHB120N60E-T5-GE3
EAN/GTIN:
     n/a
Search terms:
MOSFET
MOSFET transistor
mosfet transistor
Channel Type = N
Maximum Continuous Drain Current = 25 A
Maximum Drain Source Voltage = 650 V
Series = E Series
Mounting Type = Surface Mount
Pin Count = 3
Maximum Drain Source Resistance = 0.12 Ω
Channel Mode = Enhancement
Maximum Gate Threshold Voltage = 5V
Number of Elements per Chip = 2
More information:
Channel Type:
N
Maximum Continuous Drain Current:
25 A
Maximum Drain Source Voltage:
650 V
Package Type:
D2PAK (TO-263)
Series:
E Series
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
0.12 Ω
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
5V
Number of Elements per Chip:
2
Transistor Material:
Si
Other search terms: 2282845, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SIHB120N60ET5GE3
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