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Infineon IKW50N65EH5XKSA1 Single IGBT, 80 A 650 V, 3-Pin PG-TO247 / 2266116


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Product information
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Product Image
Item number:
     2794E-2266116
Manufacturer:
     Infineon
Manufacturer no.:
     IKW50N65EH5XKSA1
EAN/GTIN:
     n/a
Search terms:
IGBT
Power transistor
Transistor
Transistors
The Infineon IKW50N65EH5 is 650 V high speed hard switching IGBT which used co-packed with rapid si-diode technology. It has higher power density design and has low COES/EOSS.Factor 2.5 lower Qg Factor 2 reduction in switching losses 200mV reduction in VCEsat
More information:
Maximum Continuous Collector Current:
80 A
Maximum Collector Emitter Voltage:
650 V
Maximum Gate Emitter Voltage:
30V
Maximum Power Dissipation:
275 W
Number of Transistors:
1
Configuration:
Single
Package Type:
PG-TO247
Channel Type:
N
Pin Count:
3
Other search terms: power transistor, 2266116, Semiconductors, Discrete Semiconductors, IGBTs, Infineon, IKW50N65EH5XKSA1
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