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| Item number: 2794E-2266095 Manufacturer no.: IKD06N60RFATMA1 EAN/GTIN: n/a |
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![](/p.gif) | The Infineon IKD03N60RF is higher reliability due to monolithically integrated IGBT & diode due to less thermal cycling during switching. It has smooth switching performance leading to low EMI level and its operating range is 4 to 30kHz.Very tight parameter distribution Maximum junction temperature 175°C Short circuit capability of 5μs More information: ![](/p.gif) | ![](/p.gif) | Maximum Continuous Collector Current: | 6.5 A | Maximum Collector Emitter Voltage: | 600 V | Maximum Gate Emitter Voltage: | 20V | Maximum Power Dissipation: | 53.6 W | Number of Transistors: | 1 | Configuration: | Single | Package Type: | PG-TO252 | Channel Type: | N | Pin Count: | 3 | Transistor Configuration: | Single |
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![](/p.gif) | Other search terms: power transistor, 2266095, Semiconductors, Discrete Semiconductors, IGBTs, Infineon, IKD06N60RFATMA1 |
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