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Infineon IKA15N65ET6XKSA2 Single IGBT, 34 A 650 V, 3-Pin PG-TO220 / 2266082


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Product information
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Product Image
Item number:
     2794E-2266082
Manufacturer:
     Infineon
Manufacturer no.:
     IKA15N65ET6XKSA2
EAN/GTIN:
     n/a
Search terms:
Fast recovery diode
Fast recovery diodes
IGBT
Power transistor
The Infineon IKA10N65ET6 is good thermal performance, especially at higher frequencies and increased design margin and reliability. It is very soft, fast recovery anti-parallel rapid diode. It has low losses to meet energy efficient requirements.Very low VCE(sat) 1.5V(typ.) Maximum junction temperature 175°C Low gate chargeQG Pb-free lead platingRoHS compliant
More information:
Maximum Continuous Collector Current:
34 A
Maximum Collector Emitter Voltage:
650 V
Maximum Gate Emitter Voltage:
30V
Maximum Power Dissipation:
35.3 W
Number of Transistors:
1
Configuration:
Single
Package Type:
PG-TO220
Channel Type:
N
Pin Count:
3
Transistor Configuration:
Single
Other search terms: power transistor, 2266082, Semiconductors, Discrete Semiconductors, IGBTs, Infineon, IKA15N65ET6XKSA2
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