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Infineon IGB50N65S5ATMA1 Single IGBT, 80 A 650 V, 3-Pin PG-TO263 / 2266063


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Product information
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Product Image
Item number:
     2794E-2266063
Manufacturer:
     Infineon
Manufacturer no.:
     IGB50N65S5ATMA1
EAN/GTIN:
     n/a
Search terms:
IGBT
Power transistor
Transistor
Transistors
Maximum Continuous Collector Current = 80 A
Maximum Collector Emitter Voltage = 650 V
Maximum Gate Emitter Voltage = 30V
Maximum Power Dissipation = 270 W
Package Type = PG-TO263
Channel Type = N
Pin Count = 3
Transistor Configuration = Single
More information:
Maximum Continuous Collector Current:
80 A
Maximum Collector Emitter Voltage:
650 V
Maximum Gate Emitter Voltage:
30V
Maximum Power Dissipation:
270 W
Number of Transistors:
1
Configuration:
Single
Package Type:
PG-TO263
Channel Type:
N
Pin Count:
3
Transistor Configuration:
Single
Other search terms: power transistor, 2266063, Semiconductors, Discrete Semiconductors, IGBTs, Infineon, IGB50N65S5ATMA1
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