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Infineon IGB50N65S5ATMA1 Single IGBT, 80 A 650 V, 3-Pin PG-TO263 / 2266062


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Product information
Product Image
Product Image
Item number:
     2794E-2266062
Manufacturer:
     Infineon
Manufacturer no.:
     IGB50N65S5ATMA1
EAN/GTIN:
     n/a
Search terms:
IGBT
Power transistor
SMD transistor
SMD transistors
The Infineon IGB50N65S is 50 A IGBT with anti-parallel diode with no need for gate clamping component. In this soft current fall characteristics with no tail current and it is excellent for paralleling.Very low VCEsat of 1.35 V at 25°C Maximum junction temperature Tvj 175°C four times nominal current
More information:
Maximum Continuous Collector Current:
80 A
Maximum Collector Emitter Voltage:
650 V
Maximum Gate Emitter Voltage:
30V
Maximum Power Dissipation:
270 W
Number of Transistors:
1
Configuration:
Single
Package Type:
PG-TO263
Channel Type:
N
Pin Count:
3
Transistor Configuration:
Single
Other search terms: Transistor, Transistors, smd transistor, 2266062, Semiconductors, Discrete Semiconductors, IGBTs, Infineon, IGB50N65S5ATMA1
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2794 East Midlands NN17
1000
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from £ 1.416*
£ 1.416*
6546 Yorkshire LS12
2 days
2475
1
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from £ 1.4715*
£ 3.1501*
5070 West Midlands B46
1
£ 7.70*
from £ 2.63*
£ 4.34*
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Prices: 2794 East Midlands NN17
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£ 1.699
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Minimum order quantity: 1000 pieces ( £ 1,416.00* plus VAT )
Stock level: 2794 East Midlands NN17
Shipping: 2794 East Midlands NN17
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Rights to return this item: 2794 East Midlands NN17
Period of time:On the first day
Condition of packaging:Original packaging opened, but not damaged
Condition of goods:Unused
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