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Infineon IHW50N65R6XKSA1 IGBT, 83 A 650 V, 3-Pin PG-TO247-3 / 2250575


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Product information
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Item number:
     2794E-2250575
Manufacturer:
     Infineon
Manufacturer no.:
     IHW50N65R6XKSA1
EAN/GTIN:
     n/a
Search terms:
IGBT
Power transistor
Transistor
Transistors
The Infineon IHW50N65R6 is the 650 V, 50 A IGBT with monolithically integrated diode in TO-247 package with monolithically integrated diode is designed to fulfil demanding requirements of induction heating applications using half-bridge resonant topology.Frequency range 20-75 kHz Low EMI Very tight parameter distribution Maximum operating TJ of 175 °C
More information:
Maximum Continuous Collector Current:
83 A
Maximum Collector Emitter Voltage:
650 V
Maximum Gate Emitter Voltage:
±20V
Maximum Power Dissipation:
251 W
Package Type:
PG-TO247-3
Pin Count:
3
Other search terms: power transistor, 2250575, Semiconductors, Discrete Semiconductors, IGBTs, Infineon, IHW50N65R6XKSA1
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2794 East Midlands NN17
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6546 Yorkshire LS12
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Prices: 2794 East Midlands NN17
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Stock level: 2794 East Midlands NN17
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