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| Item number:
2794E-2224857 Manufacturer no.:
IMW120R220M1HXKSA1 EAN/GTIN:
n/a |
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| The Infineon CoolSiC™ 1200 V, 220 mΩ SiC MOSFET in TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic.Best in class switching and conduction losses Benchmark high threshold voltage, Vth > 4 V 0V turn-off gate voltage for easy and simple gate drive Wide gate-source voltage range Robust and low loss body diode rated for hard commutation Temperature independent turn-off switching losses More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 13 A | Maximum Drain Source Voltage: | 1200 V | Package Type: | TO-247 | Series: | IMW1 | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 22 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4.5V | Number of Elements per Chip: | 1 | Transistor Material: | Si |
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| Other search terms: 2224857, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IMW120R220M1HXKSA1 |
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