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N-Channel MOSFET, 36 A, 1200 V, 3-Pin TO-247 Infineon IMW120R060M1HXKSA1 / 2224855


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Product information
Product Image
Product Image
Item number:
     2794E-2224855
Manufacturer:
     Infineon
Manufacturer no.:
     IMW120R060M1HXKSA1
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
The Infineon CoolSiC™ 1200 V, 60 mΩ SiC MOSFET in TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages.Best in class switching and conduction losses Benchmark high threshold voltage, Vth > 4 V 0V turn-off gate voltage for easy and simple gate drive Wide gate-source voltage range Robust and low loss body diode rated for hard commutation Temperature independent turn-off switching losses
More information:
Channel Type:
N
Maximum Continuous Drain Current:
36 A
Maximum Drain Source Voltage:
1200 V
Package Type:
TO-247
Series:
IMW1
Mounting Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance:
60 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4.5V
Number of Elements per Chip:
1
Transistor Material:
Si
Other search terms: 2224855, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IMW120R060M1HXKSA1
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2794 East Midlands NN17
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6546 Yorkshire LS12
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Stock level: 2794 East Midlands NN17
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Period of time:On the first day
Condition of packaging:Original packaging opened, but not damaged
Condition of goods:Unused
Return costs:Paid by supplier
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