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| Item number:
2794E-2224851 Manufacturer no.:
IMBF170R650M1XTMA1 EAN/GTIN:
n/a |
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| The Infineon CoolSiC™ 1700 V, 650 mΩ SiC MOSFET in a TO-263-7 high creepage package is optimized for fly-back topologies to be used in auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power applications.Optimized for fly-back topologies Extremely low switching loss 12 V / 0 V gate-source voltage compatible with fly-back controllers Fully controllable dV/dt for EMI optimization SMD package with enhanced creepage and clearance distances, > 7 mm More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 7.4 A | Maximum Drain Source Voltage: | 1700 V | Package Type: | TO-263-7 | Series: | IMBF1 | Mounting Type: | Surface Mount | Pin Count: | 7 | Maximum Drain Source Resistance: | 650 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4.5V | Number of Elements per Chip: | 1 |
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