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2794E-2224837 Manufacturer no.:
IDWD10G120C5XKSA1 EAN/GTIN:
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| The Infineon CoolSiC™ Schottky diodes generation 5 1200 V, 10 A is now available in a TO-247 real 2-pin package, for easy exchange of bipolar Si diodes commonly used today. The expanded 8.7 mm creepage and clearance distances in the new package offer extra safety in high-pollution environments. Combined with a Si IGBT or super-junction MOSFET, for example in a Vienna rectifier stage or PFC boost stage used in 3-phase conversion systems, a CoolSiC™ diode raises efficiency up to 1% compared to next best Si diode alternative.No reverse recovery current, no forward recovery voltage Temperature-independent switching behaviour Low forward voltage even at high operating temperature Tight forward voltage distribution High surge current capability Real two-pin package with 8.7 mm creepage and clearance distances More information: | | Mounting Type: | SMD | Package Type: | TO-247 | Maximum Continuous Forward Current: | 10A | Peak Reverse Repetitive Voltage: | 1200V | Rectifier Type: | Schottky Diode | Diode Type: | SiC Schottky | Pin Count: | 2 | Number of Elements per Chip: | 1 | Diode Technology: | SiC Schottky |
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| Other search terms: Schottky diodes, smd diodes, 2224837, Semiconductors, Discrete Semiconductors, Schottky Diodes & Rectifiers, Infineon, IDWD10G120C5XKSA1 |
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