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2794E-2224826 Manufacturer no.:
IDM02G120C5XTMA1 EAN/GTIN:
n/a |
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| The Infineon CoolSiC™ Schottky diode generation 5 1200 V, 2 A in a DPAK real2pin package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.Revolutionary semiconductor material - Silicon Carbide No reverse recovery current / No forward recovery Temperature independent switching behavior Low forward voltage even at high operating temperature Tight forward voltage distribution Excellent thermal performance Extended surge current capability Specified dv/dt ruggedness Qualified according to JEDEC1) for target applications Pb-free lead plating RoHS compliant More information: | | Mounting Type: | SMD | Package Type: | DPAK (TO-252-2) | Maximum Continuous Forward Current: | 2A | Peak Reverse Repetitive Voltage: | 1200V | Rectifier Type: | Schottky Diode | Diode Type: | SiC Schottky | Pin Count: | 2 | Number of Elements per Chip: | 1 | Diode Technology: | SiC Schottky |
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