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2794E-2224736 Manufacturer no.:
IRF6620TRPBF EAN/GTIN:
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| The Infineon design of HEXFET® Power MOSFET Silicon technology with the advanced Direct FETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.100% Rg tested Low Conduction and Switching Losses Ultra Low Package Inductance Ideal for CPU Core DC-DC Converters More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 150 A | Maximum Drain Source Voltage: | 20 V | Package Type: | DirectFET ISOMETRIC | Series: | HEXFET | Mounting Type: | Surface Mount | Maximum Drain Source Resistance: | 0.0036 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 2.45V | Number of Elements per Chip: | 1 | Transistor Material: | Silicon |
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| Other search terms: SMD transistor, SMD transistors, Transistor, Transistors, smd transistor, 2224736, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IRF6620TRPBF |
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