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| Item number:
2794E-2194231 Manufacturer no.:
STPSC10H12G2-TR EAN/GTIN:
n/a |
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| The STMicroelectronics 10 A, 1200 V Sic diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature. Housed in D2PAK HV, this diode is perfectly suited for a usage in PFC applications, in OBC, DC/DC for EV, easing the compliance to IEC-60664-1. The STPSC10H12G2-TR will boost performances in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.No or negligible reverse recovery Switching behaviour independent of temperature Robust high voltage periphery Operating Tj from -40 °C to 175 °C Low VF D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. ECOPACK2 compliant More information: | | Mounting Type: | Surface Mount | Package Type: | D2PAK HV | Maximum Continuous Forward Current: | 10A | Peak Reverse Repetitive Voltage: | 1200V | Diode Configuration: | Single | Pin Count: | 2 | Number of Elements per Chip: | 1 |
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| Other search terms: SMD diode, SMD diodes, Schottky diode, Schottky diodes, smd diodes, 2194231, Semiconductors, Discrete Semiconductors, Schottky Diodes & Rectifiers, STMicroelectronics, STPSC10H12G2TR |
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