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| Item number: 2794E-2156660 Manufacturer no.: IKFW60N60DH3EXKSA1 EAN/GTIN: n/a |
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| The Infineon insulated-gate bipolar transistor copacked with rapid 1 fast and soft antiparallel diode in fully isolated package.High Efficiency Low Switching Losses Increased Reliability Low Electromagnetic Interference More information: | | Maximum Continuous Collector Current: | 53 A | Maximum Collector Emitter Voltage: | 600 V | Maximum Gate Emitter Voltage: | ±20 V, ±30 V | Maximum Power Dissipation: | 141 W | Package Type: | PG-TO247-3-AI | Pin Count: | 3 | Transistor Configuration: | Isolated |
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| Other search terms: power transistor, 2156660, Semiconductors, Discrete Semiconductors, IGBTs, Infineon, IKFW60N60DH3EXKSA1 |
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