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| Item number: 2794E-2156640 Manufacturer no.: IHW40N120R5XKSA1 EAN/GTIN: n/a |
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| The Infineon insulated-gate bipolar transistor with powerful monolithic body diode with low forward voltage designed for soft commutation.High Efficiency Low Switching Losses Increased Reliability Low Electromagnetic Interference More information: | | Maximum Continuous Collector Current: | 80 A | Maximum Collector Emitter Voltage: | 1200 V | Maximum Gate Emitter Voltage: | ±20 V, ±25 V | Maximum Power Dissipation: | 394 W | Package Type: | PG-TO247-3 | Pin Count: | 3 |
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| Other search terms: power transistor, 2156640, Semiconductors, Discrete Semiconductors, IGBTs, Infineon, IHW40N120R5XKSA1 |
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