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| Item number: 2794E-2156608 Manufacturer no.: AIGW40N65H5XKSA1 EAN/GTIN: n/a |
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![](/p.gif) | The Infineon high speed H5 technology insulated-gate bipolar transistor offering best-in-class efficiency in hard switching and resonant topologies.High Efficiency Low Switching Losses Increased Reliability Low Electromagnetic Interference More information: ![](/p.gif) | ![](/p.gif) | Maximum Continuous Collector Current: | 74 A | Maximum Collector Emitter Voltage: | 650 V | Maximum Gate Emitter Voltage: | ±20 V, ±30 V | Maximum Power Dissipation: | 250 W | Package Type: | PG-TO247-3 | Pin Count: | 3 |
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![](/p.gif) | Other search terms: power transistor, 2156608, Semiconductors, Discrete Semiconductors, IGBTs, Infineon, AIGW40N65H5XKSA1 |
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