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| Item number:
2794E-2152516 Manufacturer no.:
IPD80R2K4P7ATMA1 EAN/GTIN:
n/a |
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| The Infineon 800V Cool MOS™ P7 super junction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on fly back applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical fly back applications. It also enables higher power density designs through lower switching losses and better DPAK RDS(on) products.Integrated Zener diode ESD protection up to Class 2 (HBM) Best-in-class quality and reliability Fully optimized portfolio More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 2.5 A | Maximum Drain Source Voltage: | 800 V | Package Type: | DPAK (TO-252) | Series: | 800V CoolMOS™ P7 | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 2.4 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 3.5V | Number of Elements per Chip: | 1 | Transistor Material: | Si |
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| Other search terms: 2152516, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IPD80R2K4P7ATMA1 |
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