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N-Channel MOSFET, 8.4 A, 600 V, 3-Pin IPAK Infineon IPS60R800CEAKMA1 / 2149103


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Product information
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Product Image
Item number:
     2794E-2149103
Manufacturer:
     Infineon
Manufacturer no.:
     IPS60R800CEAKMA1
EAN/GTIN:
     n/a
Search terms:
Power transistor
power transistor
The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching Super junction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.Easy to use/drive Very high commutation ruggedness Qualified for standard grade applications
More information:
Channel Type:
N
Maximum Continuous Drain Current:
8.4 A
Maximum Drain Source Voltage:
600 V
Package Type:
IPAK (TO-251)
Series:
CoolMOS CE
Mounting Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance:
0.8 O
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
3.5V
Number of Elements per Chip:
1
Transistor Material:
Si
Other search terms: 2149103, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IPS60R800CEAKMA1
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